STB85NF55LT4

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Mfr.Part #
STB85NF55LT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 55V 80A D2PAK
Stock
2,140
In Stock :
2,140

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
300W
Fall Time (Typ) :
55 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Peak Reflow Temperature (Cel) :
245
Mount :
Surface Mount
Factory Lead Time :
12 Weeks
JESD-609 Code :
e3
Radiation Hardening :
No
Power Dissipation-Max :
300W Tc
Drain to Source Breakdown Voltage :
55V
Series :
STripFET™ II
Time@Peak Reflow Temperature-Max (s) :
30
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 5V
Base Part Number :
STB85N
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Element Configuration :
Single
Number of Pins :
3
Gate to Source Voltage (Vgs) :
15V
Additional Feature :
LOGIC LEVEL COMPATIBLE
Pin Count :
4
Operating Temperature :
-55°C~175°C TJ
Number of Elements :
1
Transistor Application :
SWITCHING
Voltage - Rated DC :
55V
Input Capacitance (Ciss) (Max) @ Vds :
4050pF @ 25V
Resistance :
8mOhm
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Rds On (Max) @ Id, Vgs :
8m Ω @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C :
80A Tc
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Current Rating :
80A
Lifecycle Status :
ACTIVE (Last Updated: 6 months ago)
Vgs (Max) :
±15V
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn)
Avalanche Energy Rating (Eas) :
980 mJ
Continuous Drain Current (ID) :
80A
Turn-Off Delay Time :
70 ns
Terminal Form :
Gull wing
Turn On Delay Time :
35 ns
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
165ns
Packaging :
Tape and Reel (TR)
Number of Terminations :
2
Datasheets
STB85NF55LT4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB85NF55LT4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STB85N, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, STB85NF55LT4 pinout, STB85NF55LT4 datasheet PDF, STB85NF55LT4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB85NF55LT4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB85NF55LT4


N-Channel Tape & Reel (TR) 8m Ω @ 40A, 10V ±15V 4050pF @ 25V 110nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB85NF55LT4 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 980 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4050pF @ 25V.This device conducts a continuous drain current (ID) of 80A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 70 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 35 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 15V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).

STB85NF55LT4 Features


the avalanche energy rating (Eas) is 980 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 70 ns


STB85NF55LT4 Applications


There are a lot of STMicroelectronics
STB85NF55LT4 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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