STB80N20M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

190W Tc

Fall Time (Typ) :

176 ns

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Rise Time :

31ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Base Part Number :

STB80N

Lead Free :

Lead Free

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

61A

Drain to Source Breakdown Voltage :

200V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

260A

Number of Elements :

1

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

25V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

23m Ω @ 30.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4329pF @ 50V

Mount :

Surface Mount

Resistance :

23mOhm

FET Type :

N-Channel

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Series :

MDmesh™ V

Pin Count :

4

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

65A

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

190W

Peak Reflow Temperature (Cel) :

245

Vgs (Max) :

±25V

Turn-Off Delay Time :

131 ns

Current - Continuous Drain (Id) @ 25°C :

61A Tc

JESD-609 Code :

e3

Number of Terminations :

2

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING