STB80NE03L-06T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Series :

STripFET™

Mount :

Surface Mount

Pin Count :

4

Transistor Application :

SWITCHING

Power Dissipation :

150W

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.008Ohm

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

165 ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

320A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

30V

FET Type :

N-Channel

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Current Rating :

80A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Part Number :

STB80N

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

80A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

150W Tc

Packaging :

Tape and Reel (TR)

Rise Time :

260ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

600 mJ

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

6m Ω @ 40A, 10V