STB80NF55-08T4
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- Mfr.Part #
- STB80NF55-08T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 80A D2PAK
- Stock
- 1,031
- In Stock ：
- 1,031
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Height :
- 4.6mm
- Rise Time :
- 85ns
- Current Rating :
- 80A
- Drain to Source Breakdown Voltage :
- 55V
- Transistor Element Material :
- SILICON
- Base Part Number :
- STB80N
- Series :
- STripFET™
- Width :
- 9.35mm
- Length :
- 10.4mm
- Element Configuration :
- Single
- Power Dissipation :
- 300W
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Resistance :
- 8mOhm
- Threshold Voltage :
- 3V
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 75 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3850pF @ 25V
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 245
- Power Dissipation-Max :
- 300W Tc
- FET Type :
- N-Channel
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 25 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 20 ns
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 80A
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 155nC @ 10V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 40A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Voltage - Rated DC :
- 55V
- Number of Pins :
- 3
- Datasheets
- STB80NF55-08T4
N-Channel Tape & Reel (TR) 8m Ω @ 40A, 10V ±20V 3850pF @ 25V 155nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB80NF55-08T4 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3850pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 75 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB80NF55-08T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 75 ns
a threshold voltage of 3V
STB80NF55-08T4 Applications
There are a lot of STMicroelectronics
STB80NF55-08T4 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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