STB80NF10T4
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- Mfr.Part #
- STB80NF10T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A D2PAK
- Stock
- 5,761
- In Stock ：
- 5,761
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Contact Plating :
- Tin
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 80ns
- Threshold Voltage :
- 3V
- Power Dissipation :
- 300W
- Lead Free :
- Lead Free
- Length :
- 10.4mm
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- 3 V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 80A
- Series :
- STripFET™ II
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 40A, 10V
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Width :
- 9.35mm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Fall Time (Typ) :
- 60 ns
- Pin Count :
- 4
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 300W Tc
- Resistance :
- 15mOhm
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 182nC @ 10V
- FET Type :
- N-Channel
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 116 ns
- Turn On Delay Time :
- 26 ns
- Voltage - Rated DC :
- 100V
- Case Connection :
- DRAIN
- Termination :
- SMD/SMT
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- 245
- Dual Supply Voltage :
- 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- ECCN Code :
- EAR99
- Base Part Number :
- STB80N
- Height :
- 4.6mm
- JESD-609 Code :
- e3
- Current Rating :
- 80A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Number of Elements :
- 1
- Datasheets
- STB80NF10T4
N-Channel Tape & Reel (TR) 15m Ω @ 40A, 10V ±20V 5500pF @ 25V 182nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB80NF10T4 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5500pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 80A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 116 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STB80NF10T4 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 116 ns
a threshold voltage of 3V
STB80NF10T4 Applications
There are a lot of STMicroelectronics
STB80NF10T4 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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