STB80NF55L-08-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

65 ns

Packaging :

Tube

Base Part Number :

STB80N

Mount :

Through Hole

Rise Time :

145ns

Drain to Source Breakdown Voltage :

55V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Pin Count :

3

Element Configuration :

Single

FET Type :

N-Channel

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

16V

Vgs (Max) :

±16V

Number of Elements :

1

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Continuous Drain Current (ID) :

80A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Turn-Off Delay Time :

85 ns

Turn On Delay Time :

35 ns

Power Dissipation-Max :

300W Tc

Operating Temperature :

175°C TJ

Power Dissipation :

300W

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

3

Avalanche Energy Rating (Eas) :

870 mJ

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Series :

STripFET™ II

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Transistor Element Material :

SILICON