STB80NF55-06T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Series :

STripFET™ II

Peak Reflow Temperature (Cel) :

245

Case Connection :

DRAIN

Termination :

SMD/SMT

Height :

9.35mm

Gate Charge (Qg) (Max) @ Vgs :

189nC @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current Rating :

80A

Turn-Off Delay Time :

125 ns

Rise Time :

155ns

Number of Pins :

3

Mount :

Surface Mount, Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Resistance :

6.5mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Element Configuration :

Single

Width :

4.6mm

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

3 V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Pin Count :

3

Length :

10.4mm

Turn On Delay Time :

27 ns

Number of Elements :

1

Base Part Number :

STB80N

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 40A, 10V

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

65 ns

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

300W

Threshold Voltage :

3V

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Dual Supply Voltage :

55V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant