STB8NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Element Configuration :

Single

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

200 mJ

Series :

MDmesh™ II

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

10 ns

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

Drain Current-Max (Abs) (ID) :

7A

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

28A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

70W

Terminal Form :

Gull wing

Pbfree Code :

yes

Number of Terminations :

2

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

650m Ω @ 3.5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE ENERGY RATED

Pin Count :

4

Resistance :

650mOhm

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STB8N

Number of Elements :

1

Continuous Drain Current (ID) :

7A

Power Dissipation-Max :

70W Tc

Vgs (Max) :

±25V

JESD-609 Code :

e3

FET Type :

N-Channel

Rise Time :

12ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Number of Pins :

3