STB8NM60D

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Mfr.Part #
STB8NM60D
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 8A D2PAK
Stock
485
In Stock :
485

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Continuous Drain Current (ID) :
8A
Gate to Source Voltage (Vgs) :
30V
Turn On Delay Time :
13 ns
Rise Time :
10ns
Number of Elements :
1
Radiation Hardening :
No
Pin Count :
3
Terminal Form :
Gull wing
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
8A Tc
JESD-30 Code :
R-PSSO-G2
Base Part Number :
STB8N
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
30
Additional Feature :
AVALANCHE RATED
Power Dissipation :
100W
Width :
9.35mm
Resistance :
1Ohm
Current Rating :
8A
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type :
Surface Mount
Element Configuration :
Single
JESD-609 Code :
e3
Vgs (Max) :
±30V
Height :
4.6mm
Number of Terminations :
2
Mount :
Surface Mount
Length :
10.4mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-65°C~150°C TJ
Peak Reflow Temperature (Cel) :
245
Vgs(th) (Max) @ Id :
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 25V
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
8A
Terminal Finish :
Matte Tin (Sn)
ECCN Code :
EAR99
Power Dissipation-Max :
100W Tc
Transistor Element Material :
SILICON
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
1 Ω @ 2.5A, 10V
Drain to Source Breakdown Voltage :
600V
Avalanche Energy Rating (Eas) :
200 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Voltage - Rated DC :
600V
Lifecycle Status :
NRND (Last Updated: 8 months ago)
Fall Time (Typ) :
8 ns
Number of Pins :
3
Series :
MDmesh™
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
26 ns
Datasheets
STB8NM60D
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB8NM60D from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STB8N, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-65°C~150°C TJ, Number of Pins:3, STB8NM60D pinout, STB8NM60D datasheet PDF, STB8NM60D amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB8NM60D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB8NM60D


N-Channel Tape & Reel (TR) 1 Ω @ 2.5A, 10V ±30V 380pF @ 25V 18nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB8NM60D Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 380pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB8NM60D Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 26 ns


STB8NM60D Applications


There are a lot of STMicroelectronics
STB8NM60D applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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