STB8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

245

Additional Feature :

ULTRA-LOW RESISTANCE

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Mount :

Surface Mount

Power Dissipation :

70W

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Factory Lead Time :

17 Weeks

Continuous Drain Current (ID) :

7A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Pin Count :

4

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

70W Tc

Element Configuration :

Single

Threshold Voltage :

4V

Resistance :

560mOhm

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Width :

10.4mm

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Length :

10.75mm

Number of Pins :

3

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Base Part Number :

STB8N

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

28A

Transistor Application :

SWITCHING

Series :

MDmesh™ V

Vgs (Max) :

±25V

Operating Temperature :

150°C TJ

Fall Time (Typ) :

11 ns

Rise Time :

14ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Turn On Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

20 ns

Height :

4.6mm

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

7A

Drain to Source Breakdown Voltage :

650V