STB85NS04Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

33V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STB85N

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Element Configuration :

Single

Transistor Element Material :

SILICON

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain-source On Resistance-Max :

0.015Ohm

Avalanche Energy Rating (Eas) :

550 mJ

Fall Time (Typ) :

145 ns

Power Dissipation-Max :

215W Tc

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Continuous Drain Current (ID) :

80A

Drain Current-Max (Abs) (ID) :

60A

Power Dissipation :

215W

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Series :

SAFeFET™

Gate to Source Voltage (Vgs) :

18V

Number of Elements :

1

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N-Channel

Vgs (Max) :

±18V