STB85NF55T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Height :

4.6mm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Surface Mount

FET Type :

N-Channel

Continuous Drain Current (ID) :

40A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Dual Supply Voltage :

55V

Drain-source On Resistance-Max :

0.008Ohm

Number of Pins :

3

Width :

9.35mm

Threshold Voltage :

3V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - annealed

Peak Reflow Temperature (Cel) :

245

Turn On Delay Time :

25 ns

Fall Time (Typ) :

35 ns

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Avalanche Energy Rating (Eas) :

980 mJ

Series :

STripFET™ II

Case Connection :

DRAIN

Base Part Number :

STB85N

Lead Free :

Lead Free

Power Dissipation :

300W

Turn-Off Delay Time :

70 ns

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

100ns

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

55V

Nominal Vgs :

3 V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Current Rating :

80A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3700pF @ 25V

Vgs (Max) :

±20V

Power Dissipation-Max :

300W Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Length :

10.4mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

55V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Number of Elements :

1

Factory Lead Time :

12 Weeks