SI7794DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Power Dissipation-Max :

5W Ta 48W Tc

Rise Time :

10ns

Current - Continuous Drain (Id) @ 25°C :

28.6A Ta 60A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.52nF @ 15V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Terminal Form :

C BEND

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Transistor Application :

SWITCHING

FET Feature :

Schottky Diode (Body)

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Package / Case :

PowerPAK® SO-8

Drain-source On Resistance-Max :

0.0034Ohm

JESD-30 Code :

R-XDSO-C5

Continuous Drain Current (ID) :

60A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Case Connection :

DRAIN

Terminal Position :

Dual

Power Dissipation :

5W

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Series :

SkyFET®, TrenchFET® Gen III

Fall Time (Typ) :

10 ns

Transistor Element Material :

SILICON

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Terminations :

5

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Turn-Off Delay Time :

30 ns