SI7772DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SkyFET®, TrenchFET®

JESD-30 Code :

R-PDSO-C5

Case Connection :

DRAIN

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Pulsed Drain Current-Max (IDM) :

50A

Factory Lead Time :

14 Weeks

Published :

2015

Resistance :

13mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

C BEND

Number of Terminations :

5

Pin Count :

8

Weight :

506.605978mg

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

3.9W

REACH SVHC :

No SVHC

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

35.6A Tc

Threshold Voltage :

2.5V

Number of Pins :

8

Continuous Drain Current (ID) :

35.6A

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

2.5 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Vgs (Max) :

±20V

FET Type :

N-Channel

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

13m Ω @ 15A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1084pF @ 15V

Number of Channels :

1

ECCN Code :

EAR99

Package / Case :

PowerPAK® SO-8

Number of Elements :

1

Power Dissipation-Max :

3.9W Ta 29.8W Tc

Packaging :

Tape and Reel (TR)

Terminal Finish :

MATTE TIN