SI7742DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Turn On Delay Time :

43 ns

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Power Dissipation-Max :

5.4W Ta 83W Tc

Turn-Off Delay Time :

50 ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Height :

1.04mm

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Fall Time (Typ) :

23 ns

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Rise Time :

18ns

Length :

4.9mm

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XDSO-C5

Factory Lead Time :

14 Weeks

Drain-source On Resistance-Max :

0.0035Ohm

Package / Case :

PowerPAK® SO-8

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Mount :

Surface Mount

ECCN Code :

EAR99

Width :

5.89mm

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount

Weight :

506.605978mg

Power Dissipation :

5.4W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

SkyFET®, TrenchFET®

Pin Count :

8

Number of Terminations :

5

Terminal Form :

C BEND

Published :

2015

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 15V

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 20A, 10V