SI7703EDN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

JESD-30 Code :

S-XDSO-C6

Number of Terminations :

6

Pin Count :

8

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

1.3W Ta

Fall Time (Typ) :

6 ns

Rise Time :

6ns

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

12V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Pulsed Drain Current-Max (IDM) :

20A

FET Type :

P-Channel

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Transistor Application :

SWITCHING

FET Feature :

Schottky Diode (Isolated)

Rds On (Max) @ Id, Vgs :

48m Ω @ 6.3A, 4.5V

Continuous Drain Current (ID) :

-6.3A

Number of Pins :

8

Package / Case :

PowerPAK® 1212-8

Threshold Voltage :

-1V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

1V @ 800μA

Pbfree Code :

yes

Turn-Off Delay Time :

23 ns

Turn On Delay Time :

4 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Published :

2013

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Drain Current-Max (Abs) (ID) :

4.3A

Power Dissipation :

1.3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)