SI7748DP-T1-GE3
- Mfr.Part #
- SI7748DP-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 50A PPAK SO-8
- Stock
- 38,196
- In Stock :
- 38,196
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 36 ns
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Published :
- 2016
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Power Dissipation-Max :
- 4.8W Ta 56W Tc
- Number of Pins :
- 8
- Resistance :
- 4.8mOhm
- RoHS Status :
- ROHS3 Compliant
- Series :
- SkyFET®, TrenchFET®
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 50A
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 4.8W
- Pin Count :
- 8
- JESD-30 Code :
- R-XDSO-C5
- Number of Terminations :
- 5
- Width :
- 5.89mm
- FET Type :
- N-Channel
- Rise Time :
- 16ns
- Mounting Type :
- Surface Mount
- Height :
- 1.04mm
- Transistor Element Material :
- SILICON
- Weight :
- 506.605978mg
- Factory Lead Time :
- 13 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 44 ns
- Length :
- 4.9mm
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 4.8m Ω @ 15A, 10V
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 92nC @ 10V
- Fall Time (Typ) :
- 16 ns
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3770pF @ 15V
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.7V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 23.5A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pbfree Code :
- yes
- Terminal Form :
- C BEND
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Package / Case :
- PowerPAK® SO-8
- Datasheets
- SI7748DP-T1-GE3
N-Channel Tape & Reel (TR) 4.8m Ω @ 15A, 10V ±20V 3770pF @ 15V 92nC @ 10V PowerPAK® SO-8
SI7748DP-T1-GE3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The maximum input capacitance of this device is 3770pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 50A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 23.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 44 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7748DP-T1-GE3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 44 ns
SI7748DP-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7748DP-T1-GE3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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