SI7703EDN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

1V @ 800μA

Pbfree Code :

yes

Published :

2016

Mounting Type :

Surface Mount

Package / Case :

PowerPAK® 1212-8

Continuous Drain Current (ID) :

-6.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.3W

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

49 Weeks

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

20A

Terminal Form :

C BEND

JESD-30 Code :

S-XDSO-C6

FET Type :

P-Channel

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Rds On (Max) @ Id, Vgs :

48m Ω @ 6.3A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn On Delay Time :

4 ns

FET Feature :

Schottky Diode (Isolated)

Number of Terminations :

6

Transistor Element Material :

SILICON

Mount :

Surface Mount

Rise Time :

6ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain Current-Max (Abs) (ID) :

4.3A

ECCN Code :

EAR99

Turn-Off Delay Time :

23 ns

Fall Time (Typ) :

6 ns

Series :

TrenchFET®

Terminal Finish :

MATTE TIN

Pin Count :

8

Vgs (Max) :

±12V

Drain to Source Breakdown Voltage :

20V

Power Dissipation-Max :

1.3W Ta