SI7774DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Continuous Drain Current (ID) :

60A

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 15A, 10V

Number of Pins :

8

Element Configuration :

Single

Package / Case :

PowerPAK® SO-8

JESD-30 Code :

R-XDSO-C5

Input Capacitance (Ciss) (Max) @ Vds :

2630pF @ 15V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Terminal Form :

C BEND

Series :

SkyFET®, TrenchFET®

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Published :

2013

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mount :

Surface Mount

Weight :

506.605978mg

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

30V

Pin Count :

8

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

5W

Number of Channels :

1

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Power Dissipation-Max :

5W Ta 48W Tc