SI7720DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Radiation Hardening :

No

Turn-Off Delay Time :

29 ns

Number of Pins :

8

Number of Terminations :

5

Threshold Voltage :

2.5V

Avalanche Energy Rating (Eas) :

20 mJ

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1790pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Power Dissipation-Max :

3.8W Ta 52W Tc

Pin Count :

8

JESD-30 Code :

S-XDSO-C5

Fall Time (Typ) :

12 ns

Transistor Application :

SWITCHING

FET Type :

N-Channel

Turn On Delay Time :

23 ns

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

14 Weeks

Height :

1.04mm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Mount :

Surface Mount

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Pbfree Code :

yes

Width :

3.05mm

Drain to Source Breakdown Voltage :

30V

Number of Elements :

1

Published :

2005

Gate to Source Voltage (Vgs) :

20V

Rise Time :

13ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

50A

Continuous Drain Current (ID) :

12A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

Unknown

Series :

SkyFET®, TrenchFET®

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 10A, 10V

Length :

3.05mm

Power Dissipation :

3.8W

Operating Temperature :

-50°C~150°C TJ

Packaging :

Tape and Reel (TR)

Package / Case :

PowerPAK® 1212-8

Terminal Form :

C BEND