SI7758DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

7150pF @ 15V

Series :

SkyFET®, TrenchFET®

Drain to Source Breakdown Voltage :

30V

Terminal Form :

C BEND

Turn-Off Delay Time :

56 ns

Height :

1.04mm

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Rise Time :

25ns

Number of Pins :

8

Length :

4.9mm

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

Resistance :

2.9mOhm

Power Dissipation-Max :

6.25W Ta 104W Tc

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Fall Time (Typ) :

30 ns

Terminal Position :

Dual

Package / Case :

PowerPAK® SO-8

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Radiation Hardening :

No

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.7V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Continuous Drain Current (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 20A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Weight :

506.605978mg

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

5.89mm

Turn On Delay Time :

53 ns

JESD-30 Code :

R-XDSO-C5

FET Type :

N-Channel

Power Dissipation :

6.25W

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2016