SI7716ADN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

MATTE TIN

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Turn-Off Delay Time :

14 ns

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

846pF @ 15V

Turn On Delay Time :

15 ns

Continuous Drain Current (ID) :

16A

Threshold Voltage :

2.5V

Width :

3.05mm

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

30V

Radiation Hardening :

No

Resistance :

13.5mOhm

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

32A

ECCN Code :

EAR99

REACH SVHC :

Unknown

Height :

1.04mm

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JESD-30 Code :

S-XDSO-C5

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Number of Terminations :

5

Power Dissipation-Max :

3.5W Ta 27.7W Tc

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® 1212-8

Case Connection :

DRAIN

Series :

TrenchFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

C BEND

Gate to Source Voltage (Vgs) :

20V

Rise Time :

12ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

13.5m Ω @ 10A, 10V

Power Dissipation :

3.5W

RoHS Status :

ROHS3 Compliant

Length :

3.05mm

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

8

JESD-609 Code :

e3

Pbfree Code :

yes

Mounting Type :

Surface Mount

FET Type :

N-Channel