SI7718DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

C BEND

Number of Channels :

1

Radiation Hardening :

No

Number of Elements :

1

Length :

3.05mm

Rds On (Max) @ Id, Vgs :

6m Ω @ 10A, 10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Turn-Off Delay Time :

26 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

S-XDSO-C5

Package / Case :

PowerPAK® 1212-8

Power Dissipation-Max :

3.7W Ta 52W Tc

Mount :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Turn On Delay Time :

22 ns

Rise Time :

13ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.006Ohm

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Time@Peak Reflow Temperature-Max (s) :

40

Width :

3.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2015

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Series :

TrenchFET®

Threshold Voltage :

2.5V

FET Type :

N-Channel

Pbfree Code :

yes

Fall Time (Typ) :

12 ns

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

Pin Count :

8

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

70A

Avalanche Energy Rating (Eas) :

20 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Height :

1.04mm

Terminal Position :

Dual

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

35A

REACH SVHC :

Unknown