SI7726DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.8W Ta 52W Tc

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1765pF @ 15V

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Mount :

Surface Mount

Pin Count :

8

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 10A, 10V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Series :

SkyFET®, TrenchFET®

Number of Terminations :

5

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Width :

3.05mm

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

20 mJ

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

35A

Terminal Form :

C BEND

Rise Time :

10ns

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Number of Pins :

8

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Published :

2009

Length :

3.05mm

Nominal Vgs :

2.6 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Turn On Delay Time :

23 ns

Transistor Application :

SWITCHING

Operating Temperature :

-50°C~150°C TJ

Power Dissipation :

3.8W

Turn-Off Delay Time :

27 ns

Case Connection :

DRAIN

Fall Time (Typ) :

14 ns

Time@Peak Reflow Temperature-Max (s) :

30

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

60A

Drain-source On Resistance-Max :

0.0095Ohm

Package / Case :

PowerPAK® 1212-8

JESD-30 Code :

S-XDSO-C5

Height :

1.04mm

Number of Channels :

1

Transistor Element Material :

SILICON