SI7784DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

Unknown

Min Operating Temperature :

-55°C

Published :

2015

Threshold Voltage :

2.5V

Number of Channels :

1

Turn On Delay Time :

22 ns

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Rds On (Max) @ Id, Vgs :

6mOhm @ 20A, 10V

Continuous Drain Current (ID) :

35A

Power Dissipation :

5W

Rds On Max :

6 mΩ

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±20V

Series :

TrenchFET®

Element Configuration :

Single

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Resistance :

6mOhm

Input Capacitance :

1.6nF

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Drain to Source Resistance :

6.5mOhm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Width :

5.89mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Turn-Off Delay Time :

26 ns

Rise Time :

13ns

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

5W Ta 27.7W Tc

Weight :

506.605978mg

Supplier Device Package :

PowerPAK® SO-8

Height :

1.04mm

Length :

4.9mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V