SI7792DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Power Dissipation-Max :

6.25W Ta 104W Tc

Series :

SkyFET®, TrenchFET® Gen III

Turn-Off Delay Time :

40 ns

Continuous Drain Current (ID) :

60A

FET Feature :

Schottky Diode (Body)

DS Breakdown Voltage-Min :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

135nC @ 10V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

100A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 20A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

125 mJ

Rise Time :

13ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn On Delay Time :

15 ns

Terminal Form :

C BEND

Number of Terminations :

5

Drain-source On Resistance-Max :

0.0021Ohm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4.735nF @ 15V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

22 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Published :

2017

Current - Continuous Drain (Id) @ 25°C :

40.6A Ta 60A Tc

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-C5

Drain to Source Voltage (Vdss) :

30V

Terminal Position :

Dual

Contact Plating :

Tin

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Package / Case :

PowerPAK® SO-8