SI7392DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

9 ns

Package / Case :

PowerPAK® SO-8

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

30V

Continuous Drain Current (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain Current-Max (Abs) (ID) :

9A

Published :

2016

Power Dissipation :

1.8W

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.00975Ohm

Pulsed Drain Current-Max (IDM) :

50A

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9.75m Ω @ 15A, 10V

Turn-Off Delay Time :

46 ns

Avalanche Energy Rating (Eas) :

45 mJ

FET Type :

N-Channel

ECCN Code :

EAR99

JESD-30 Code :

R-XDSO-C5

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.8W Ta

Transistor Element Material :

SILICON

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

9A Ta

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Terminal Position :

Dual

Pin Count :

8

Mount :

Surface Mount

JESD-609 Code :

e3

Number of Pins :

8

Pbfree Code :

yes

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

TrenchFET®

Transistor Application :

SWITCHING