SI7328DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.04mm

Turn On Delay Time :

10 ns

Mounting Type :

Surface Mount

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2610pF @ 15V

Factory Lead Time :

14 Weeks

Pin Count :

8

Continuous Drain Current (ID) :

35A

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-50°C~150°C TJ

Case Connection :

DRAIN

JESD-30 Code :

S-XDSO-C5

Threshold Voltage :

1.5V

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Turn-Off Delay Time :

35 ns

Number of Pins :

8

Resistance :

6.6mOhm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 18.9A, 10V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Pbfree Code :

yes

Fall Time (Typ) :

8 ns

Number of Elements :

1

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Length :

3.3mm

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

10ns

FET Type :

N-Channel

REACH SVHC :

Unknown

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Gate to Source Voltage (Vgs) :

12V

Terminal Position :

Dual

Vgs (Max) :

±12V

Package / Case :

PowerPAK® 1212-8

Terminal Form :

C BEND

Pulsed Drain Current-Max (IDM) :

60A

Series :

TrenchFET®

Published :

2005

JESD-609 Code :

e3

Width :

3.3mm

Gate Charge (Qg) (Max) @ Vgs :

31.5nC @ 4.5V

Power Dissipation-Max :

3.78W Ta 52W Tc

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260