SI7309DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchFET®

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

20A

Turn On Delay Time :

10 ns

Width :

3.05mm

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Rds On (Max) @ Id, Vgs :

115m Ω @ 3.9A, 10V

ECCN Code :

EAR99

Rise Time :

15ns

Turn-Off Delay Time :

30 ns

Vgs (Max) :

±20V

Lead Free :

Lead Free

Mount :

Surface Mount

Published :

2017

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 30V

Height :

1.04mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

-60V

Package / Case :

PowerPAK® 1212-8

JESD-30 Code :

S-XDSO-C5

FET Type :

P-Channel

Terminal Position :

Dual

Power Dissipation :

3.2W

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

5

Element Configuration :

Single

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.2W Ta 19.8W Tc

Continuous Drain Current (ID) :

-8A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

8A

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Number of Pins :

8

Factory Lead Time :

14 Weeks

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.05mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

33 ns

Transistor Application :

SWITCHING

Radiation Hardening :

No

Pbfree Code :

yes