SI7317DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

9.8nC @ 10V

Number of Terminations :

5

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

JESD-30 Code :

S-PDSO-C5

Terminal Position :

Dual

Turn-Off Delay Time :

11 ns

Vgs (Max) :

±30V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 75V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Form :

C BEND

FET Type :

P-Channel

Avalanche Energy Rating (Eas) :

0.8 mJ

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Number of Channels :

1

Package / Case :

PowerPAK® 1212-8

RoHS Status :

ROHS3 Compliant

Resistance :

1.2Ohm

Rise Time :

11ns

Continuous Drain Current (ID) :

2.8A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pulsed Drain Current-Max (IDM) :

2A

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Published :

2016

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 500mA, 10V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.2W Ta 19.8W Tc

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Vgs(th) (Max) @ Id :

4.5V @ 250μA