SI7315DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Factory Lead Time :

14 Weeks

Number of Elements :

1

Transistor Application :

SWITCHING

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

23 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

9ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

150V

Transistor Element Material :

SILICON

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-150V

Package / Case :

PowerPAK® 1212-8

JESD-30 Code :

S-PDSO-C5

Drive Voltage (Max Rds On,Min Rds On) :

7.5V 10V

Continuous Drain Current (ID) :

-8.9A

Current - Continuous Drain (Id) @ 25°C :

8.9A Tc

Published :

2014

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-50°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 75V

JESD-609 Code :

e3

Mount :

Surface Mount

Mounting Type :

Surface Mount

REACH SVHC :

Unknown

Vgs (Max) :

±30V

Power Dissipation :

3.8W

Terminal Form :

C BEND

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

8 ns

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.8W Ta 52W Tc

Rds On (Max) @ Id, Vgs :

315m Ω @ 2.4A, 10V

Series :

TrenchFET®

Number of Terminations :

5