SI7308DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Fall Time (Typ) :

10 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Single

Package / Case :

PowerPAK® 1212-8

Resistance :

58mOhm

Case Connection :

DRAIN

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Factory Lead Time :

14 Weeks

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Rds On (Max) @ Id, Vgs :

58m Ω @ 5.4A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

C BEND

Height :

1.04mm

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3V

REACH SVHC :

Unknown

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Pin Count :

8

Number of Terminations :

5

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

6A

Turn-Off Delay Time :

20 ns

Width :

3.05mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain Current-Max (Abs) (ID) :

5.4A

Turn On Delay Time :

10 ns

ECCN Code :

EAR99

Number of Channels :

1

Length :

3.05mm

FET Type :

N-Channel

Series :

TrenchFET®

Power Dissipation-Max :

3.2W Ta 19.8W Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Lead Free :

Lead Free

JESD-30 Code :

S-XDSO-C5

Published :

2015

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Power Dissipation :

3.2W