SI7326DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

8

Turn On Delay Time :

8 ns

FET Type :

N-Channel

Series :

TrenchFET®

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 10A, 10V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

JESD-30 Code :

S-XDSO-C5

Contact Plating :

Tin

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Published :

2016

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

6.5A

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Rise Time :

12ns

Power Dissipation-Max :

1.5W Ta

Case Connection :

DRAIN

Nominal Vgs :

1.8 V

Mounting Type :

Surface Mount

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

40A

Package / Case :

PowerPAK® 1212-8

Power Dissipation :

1.5W

Number of Elements :

1

JESD-609 Code :

e3

ECCN Code :

EAR99

Vgs (Max) :

±25V

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Number of Channels :

1

Transistor Element Material :

SILICON

Width :

3.3mm

Continuous Drain Current (ID) :

10A

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

32 ns

Length :

3.3mm

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

5

Drain to Source Breakdown Voltage :

30V

Height :

1.04mm