SI7302DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Terminal Form :

C BEND

Published :

2013

Drain to Source Voltage (Vdss) :

220V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

10 ns

Drain-source On Resistance-Max :

0.32Ohm

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Package / Case :

PowerPAK® 1212-8

Operating Mode :

ENHANCEMENT MODE

Series :

TrenchFET®

Turn-Off Delay Time :

20 ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

15 ns

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Pbfree Code :

yes

Pin Count :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

10ns

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

3.8W

Rds On (Max) @ Id, Vgs :

320m Ω @ 2.3A, 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

MATTE TIN

Continuous Drain Current (ID) :

2.3A

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 15V

Radiation Hardening :

No

Mount :

Surface Mount

Number of Terminations :

5

Power Dissipation-Max :

3.8W Ta 52W Tc

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

JESD-30 Code :

S-XDSO-C5

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs (Max) :

±20V