SI7322DN-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Lead Free :

Lead Free

JESD-609 Code :

e3

Case Connection :

DRAIN

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Terminal Form :

C BEND

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Package / Case :

PowerPAK® 1212-8

Drain to Source Breakdown Voltage :

100V

Resistance :

58mOhm

Length :

3.05mm

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Width :

3.05mm

Pulsed Drain Current-Max (IDM) :

20A

Radiation Hardening :

No

REACH SVHC :

Unknown

Threshold Voltage :

4.4V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 50V

Vgs(th) (Max) @ Id :

4.4V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

18A

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

8

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Pbfree Code :

yes

Height :

1.04mm

Pin Count :

8

Turn-Off Delay Time :

12 ns

Published :

2013

Power Dissipation-Max :

3.8W Ta 52W Tc

Power Dissipation :

52W

Rds On (Max) @ Id, Vgs :

58m Ω @ 5.5A, 10V

Rise Time :

10ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

S-XDSO-C5

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Number of Terminations :

5

Fall Time (Typ) :

10 ns

ECCN Code :

EAR99