SI7322ADN-T1-GE3

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Mfr.Part #
SI7322ADN-T1-GE3
Manufacturer
Vishay
Package / Case
PowerPAK® 1212-8
Datasheet
Download
Description
MOSFET N-CH 100V 15.1A PPAK
Stock
83,785
In Stock :
83,785

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
ThunderFET®
Package / Case :
PowerPAK® 1212-8
Max Junction Temperature (Tj) :
150°C
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Turn On Delay Time :
6 ns
Operating Temperature :
-55°C~150°C TJ
Continuous Drain Current (ID) :
5.4A
Current - Continuous Drain (Id) @ 25°C :
15.1A Tc
RoHS Status :
ROHS3 Compliant
Number of Channels :
1
Drain to Source Breakdown Voltage :
100V
Rds On (Max) @ Id, Vgs :
57m Ω @ 5.5A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 50V
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Height :
1.17mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Packaging :
Tape and Reel (TR)
Power Dissipation-Max :
26W Tc
Factory Lead Time :
14 Weeks
Power Dissipation :
3.3W
Turn-Off Delay Time :
9 ns
Datasheets
SI7322ADN-T1-GE3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7322ADN-T1-GE3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PowerPAK® 1212-8, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, SI7322ADN-T1-GE3 pinout, SI7322ADN-T1-GE3 datasheet PDF, SI7322ADN-T1-GE3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7322ADN-T1-GE3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7322ADN-T1-GE3


N-Channel Tape & Reel (TR) 57m Ω @ 5.5A, 10V ±20V 360pF @ 50V 13nC @ 10V PowerPAK® 1212-8

SI7322ADN-T1-GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

SI7322ADN-T1-GE3 Features


a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 9 ns


SI7322ADN-T1-GE3 Applications


There are a lot of Vishay Siliconix
SI7322ADN-T1-GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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