SI7322ADN-T1-GE3
- Mfr.Part #
- SI7322ADN-T1-GE3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® 1212-8
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 15.1A PPAK
- Stock
- 83,785
- In Stock :
- 83,785
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- ThunderFET®
- Package / Case :
- PowerPAK® 1212-8
- Max Junction Temperature (Tj) :
- 150°C
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Turn On Delay Time :
- 6 ns
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 5.4A
- Current - Continuous Drain (Id) @ 25°C :
- 15.1A Tc
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 57m Ω @ 5.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 1.17mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 26W Tc
- Factory Lead Time :
- 14 Weeks
- Power Dissipation :
- 3.3W
- Turn-Off Delay Time :
- 9 ns
- Datasheets
- SI7322ADN-T1-GE3
N-Channel Tape & Reel (TR) 57m Ω @ 5.5A, 10V ±20V 360pF @ 50V 13nC @ 10V PowerPAK® 1212-8
SI7322ADN-T1-GE3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 360pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
SI7322ADN-T1-GE3 Features
a continuous drain current (ID) of 5.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 9 ns
SI7322ADN-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI7322ADN-T1-GE3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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