SI7326DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.04mm

Continuous Drain Current (ID) :

6.5A

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

12 ns

Vgs (Max) :

±25V

Turn On Delay Time :

8 ns

FET Type :

N-Channel

Mount :

Surface Mount

Number of Channels :

1

Terminal Form :

C BEND

Pulsed Drain Current-Max (IDM) :

40A

Width :

3.3mm

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

14 Weeks

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.8V @ 250μA

Package / Case :

PowerPAK® 1212-8

Length :

3.3mm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 10A, 10V

Series :

TrenchFET®

Transistor Application :

SWITCHING

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

25V

Packaging :

Tape and Reel (TR)

Pin Count :

8

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.5W

Current - Continuous Drain (Id) @ 25°C :

6.5A Ta

Case Connection :

DRAIN

Contact Plating :

Tin

Turn-Off Delay Time :

32 ns

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

12ns

Mounting Type :

Surface Mount

Number of Pins :

8

Number of Elements :

1

JESD-30 Code :

S-XDSO-C5

Drain to Source Breakdown Voltage :

30V

Power Dissipation-Max :

1.5W Ta

Transistor Element Material :

SILICON