SI7308DN-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Mount :

Surface Mount

Series :

TrenchFET®

Pulsed Drain Current-Max (IDM) :

20A

Height :

1.04mm

Terminal Form :

C BEND

Continuous Drain Current (ID) :

6A

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Length :

3.05mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

20 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

5.4A

REACH SVHC :

Unknown

Case Connection :

DRAIN

Number of Channels :

1

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

6A Tc

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

60V

Terminal Position :

Dual

Mounting Type :

Surface Mount

JESD-30 Code :

S-XDSO-C5

Packaging :

Tape and Reel (TR)

Published :

2008

FET Type :

N-Channel

Package / Case :

PowerPAK® 1212-8

Pin Count :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Resistance :

58mOhm

Rds On (Max) @ Id, Vgs :

58m Ω @ 5.4A, 10V

Peak Reflow Temperature (Cel) :

260

Width :

3.05mm

Terminal Finish :

Matte Tin (Sn)

Power Dissipation-Max :

3.2W Ta 19.8W Tc

Number of Elements :

1

Fall Time (Typ) :

10 ns

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

665pF @ 15V

JESD-609 Code :

e3

Number of Terminations :

5

ECCN Code :

EAR99

Threshold Voltage :

3V

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

10 ns

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Power Dissipation :

3.2W