SI7392DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

45 mJ

Terminal Position :

Dual

Vgs (Max) :

±20V

JESD-30 Code :

R-XDSO-C5

Series :

TrenchFET®

Number of Terminations :

5

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

30V

Package / Case :

PowerPAK® SO-8

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

1.8W Ta

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Drain-source On Resistance-Max :

0.00975Ohm

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

9.75m Ω @ 15A, 10V

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

C BEND

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Published :

2016

Pulsed Drain Current-Max (IDM) :

50A

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Case Connection :

DRAIN

Pbfree Code :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

30V