SI7392ADP-T1-E3
- Mfr.Part #
- SI7392ADP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 30A PPAK SO-8
- Stock
- 27,037
- In Stock :
- 27,037
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1465pF @ 15V
- Avalanche Energy Rating (Eas) :
- 30 mJ
- Case Connection :
- DRAIN
- Terminal Form :
- C BEND
- Fall Time (Typ) :
- 8 ns
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchFET®
- Pulsed Drain Current-Max (IDM) :
- 50A
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Pin Count :
- 8
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 35ns
- Additional Feature :
- FAST SWITCHING
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 12.5A, 10V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 17.5A
- Power Dissipation :
- 5W
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 38nC @ 10V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Turn-Off Delay Time :
- 23 ns
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 30A
- JESD-30 Code :
- R-XDSO-C5
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- PowerPAK® SO-8
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 5W Ta 27.5W Tc
- Terminal Position :
- Dual
- Datasheets
- SI7392ADP-T1-E3
N-Channel Tape & Reel (TR) 7.5m Ω @ 12.5A, 10V ±20V 1465pF @ 15V 38nC @ 10V PowerPAK® SO-8
SI7392ADP-T1-E3 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 30 mJ.A device's maximal input capacitance is 1465pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 30A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 50A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
SI7392ADP-T1-E3 Features
the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 17.5A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 50A.
SI7392ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7392ADP-T1-E3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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