SI7390DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Element Configuration :

Single

ECCN Code :

EAR99

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

50A

Radiation Hardening :

No

Length :

4.9mm

Terminal Form :

C BEND

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Series :

TrenchFET®

Drain-source On Resistance-Max :

0.0095Ohm

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

JESD-609 Code :

e3

FET Type :

N-Channel

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

9A

Vgs(th) (Max) @ Id :

3V @ 250µA

Vgs (Max) :

±20V

Turn On Delay Time :

16 ns

Terminal Finish :

MATTE TIN

Width :

5.89mm

Factory Lead Time :

14 Weeks

Weight :

506.605978mg

Turn-Off Delay Time :

43 ns

Published :

2012

Pin Count :

8

JESD-30 Code :

R-XDSO-C5

Transistor Element Material :

SILICON

Height :

1.04mm

Fall Time (Typ) :

7 ns

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Package / Case :

PowerPAK® SO-8

Power Dissipation-Max :

1.8W Ta

Number of Channels :

1

Rise Time :

7ns

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30V