SI7390DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-XDSO-C5

Weight :

506.605978mg

RoHS Status :

ROHS3 Compliant

Width :

5.89mm

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

1.8W

Resistance :

9.5MOhm

Pulsed Drain Current-Max (IDM) :

50A

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Fall Time (Typ) :

7 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Length :

4.9mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

43 ns

Transistor Application :

SWITCHING

Published :

2013

ECCN Code :

EAR99

Radiation Hardening :

No

Height :

1.04mm

DS Breakdown Voltage-Min :

30V

Terminal Form :

C BEND

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 15A, 10V

Pin Count :

8

Number of Pins :

8

Case Connection :

DRAIN

Continuous Drain Current (ID) :

9A

Drain Current-Max (Abs) (ID) :

9A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

7ns

Element Configuration :

Single

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Power Dissipation-Max :

1.8W Ta

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET®

Number of Terminations :

5