SI7388DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.007Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

20 ns

Number of Elements :

1

Continuous Drain Current (ID) :

19A

Package / Case :

PowerPAK® SO-8

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2008

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

7m Ω @ 19A, 10V

FET Type :

N-Channel

Power Dissipation-Max :

1.9W Ta

Case Connection :

DRAIN

Series :

TrenchFET®

Drain Current-Max (Abs) (ID) :

12A

Turn-Off Delay Time :

44 ns

Vgs(th) (Max) @ Id :

1.6V @ 250μA

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

14 ns

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Pin Count :

8

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Rise Time :

10ns

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Pulsed Drain Current-Max (IDM) :

50A

Drain to Source Breakdown Voltage :

30V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 5V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

C BEND