SI7388DP-T1-E3

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Mfr.Part #
SI7388DP-T1-E3
Manufacturer
Vishay
Package / Case
PowerPAK® SO-8
Datasheet
Download
Description
MOSFET N-CH 30V 12A PPAK SO-8
Stock
3,184
In Stock :
3,184

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
TrenchFET®
Current - Continuous Drain (Id) @ 25°C :
12A Ta
Element Configuration :
Single
Continuous Drain Current (ID) :
12A
Vgs(th) (Max) @ Id :
1.6V @ 250μA
Packaging :
Tape and Reel (TR)
FET Type :
N-Channel
Power Dissipation-Max :
1.9W Ta
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Max Operating Temperature :
150°C
Resistance :
7mOhm
Lead Free :
Lead Free
Power Dissipation :
5W
Width :
5.0038mm
Package / Case :
PowerPAK® SO-8
Mounting Type :
Surface Mount
Min Operating Temperature :
-55°C
Published :
2016
Height :
1.0668mm
Supplier Device Package :
PowerPAK® SO-8
Turn-Off Delay Time :
44 ns
Turn On Delay Time :
14 ns
Fall Time (Typ) :
10 ns
Rise Time :
10ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On Max :
7 mΩ
Rds On (Max) @ Id, Vgs :
7mOhm @ 19A, 10V
Length :
5.969mm
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
30V
Radiation Hardening :
No
Gate Charge (Qg) (Max) @ Vgs :
24nC @ 5V
Number of Pins :
8
Drain to Source Resistance :
7mOhm
Drain to Source Voltage (Vdss) :
30V
Datasheets
SI7388DP-T1-E3
Introducing Transistors - FETs, MOSFETs - Single Vishay SI7388DP-T1-E3 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:PowerPAK® SO-8, Mounting Type:Surface Mount, Number of Pins:8, SI7388DP-T1-E3 pinout, SI7388DP-T1-E3 datasheet PDF, SI7388DP-T1-E3 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay SI7388DP-T1-E3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI7388DP-T1-E3


N-Channel Tape & Reel (TR) 7mOhm @ 19A, 10V ±20V 24nC @ 5V 30V PowerPAK® SO-8

SI7388DP-T1-E3 Overview


Its continuous drain current is 12A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 44 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 7mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI7388DP-T1-E3 Features


a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 44 ns
single MOSFETs transistor is 7mOhm
a 30V drain to source voltage (Vdss)


SI7388DP-T1-E3 Applications


There are a lot of Vishay Siliconix
SI7388DP-T1-E3 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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