SI7386DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Package / Case :

PowerPAK® SO-8

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Number of Terminations :

5

Height :

1.04mm

Power Dissipation :

1.8W

ECCN Code :

EAR99

Mount :

Surface Mount

Rise Time :

9ns

Peak Reflow Temperature (Cel) :

260

Width :

5.89mm

JESD-30 Code :

R-XDSO-C5

Series :

TrenchFET®

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.8W Ta

Resistance :

7mOhm

Vgs (Max) :

±20V

Number of Elements :

1

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

2V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Number of Channels :

1

Length :

4.9mm

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

32 mJ

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Turn-Off Delay Time :

35 ns

Radiation Hardening :

No

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

50A

FET Type :

N-Channel

Factory Lead Time :

14 Weeks

Terminal Position :

Dual

Turn On Delay Time :

12 ns

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Terminal Form :

C BEND

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

10 ns

Number of Pins :

8

Continuous Drain Current (ID) :

19A

Rds On (Max) @ Id, Vgs :

7m Ω @ 19A, 10V

Drain to Source Breakdown Voltage :

30V

Weight :

506.605978mg

Additional Feature :

FAST SWITCHING

Pin Count :

8