SI7384DP-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

45 ns

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Width :

5.89mm

Package / Case :

PowerPAK® SO-8

Series :

TrenchFET®

Terminal Position :

Dual

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

13 ns

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 18A, 10V

Mounting Type :

Surface Mount

Terminal Form :

C BEND

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Radiation Hardening :

No

ECCN Code :

EAR99

Rise Time :

13ns

Number of Channels :

1

Height :

1.04mm

Power Dissipation :

1.8W

Transistor Element Material :

SILICON

FET Type :

N-Channel

Resistance :

8.5mOhm

Continuous Drain Current (ID) :

11A

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Published :

2016

JESD-609 Code :

e3

Power Dissipation-Max :

1.8W Ta

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Avalanche Energy Rating (Eas) :

32 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

506.605978mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

30V

Length :

4.9mm

Pin Count :

8

Number of Terminations :

8

Element Configuration :

Single

Lead Free :

Lead Free

Pbfree Code :

yes

Turn On Delay Time :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

50A

Mount :

Surface Mount