SI7382DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

C BEND

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

1.8W Ta

Pbfree Code :

yes

Turn-Off Delay Time :

67 ns

ECCN Code :

EAR99

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

50A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pin Count :

8

Series :

TrenchFET®

Transistor Element Material :

SILICON

Element Configuration :

Single

Mount :

Surface Mount

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Turn On Delay Time :

18 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Terminal Position :

Dual

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Rise Time :

16ns

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0047Ohm

Avalanche Energy Rating (Eas) :

45 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

20 ns

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-XDSO-C5

Radiation Hardening :

No

Weight :

506.605978mg

Published :

2008

Package / Case :

PowerPAK® SO-8

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 24A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Continuous Drain Current (ID) :

14A

Number of Channels :

1

Number of Terminations :

5

Transistor Application :

SWITCHING