SI7382DP-T1-E3
- Mfr.Part #
- SI7382DP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 14A PPAK SO-8
- Stock
- 65,934
- In Stock :
- 65,934
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 67 ns
- Published :
- 2014
- Turn On Delay Time :
- 18 ns
- Packaging :
- Tape and Reel (TR)
- Series :
- TrenchFET®
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 14A
- JESD-30 Code :
- R-PDSO-N8
- Reach Compliance Code :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Elements :
- 1
- Height :
- 1.04mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Number of Channels :
- 1
- Avalanche Energy Rating (Eas) :
- 45 mJ
- Fall Time (Typ) :
- 16 ns
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Length :
- 4.9mm
- Width :
- 5.89mm
- Pin Count :
- 8
- Terminal Position :
- Dual
- Resistance :
- 4.7MOhm
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Package / Case :
- PowerPAK® SO-8
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 24A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Ta
- Drain Current-Max (Abs) (ID) :
- 24A
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Weight :
- 506.605978mg
- Rise Time :
- 16ns
- Terminal Form :
- NO LEAD
- Power Dissipation-Max :
- 1.8W Ta
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Pulsed Drain Current-Max (IDM) :
- 50A
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SI7382DP-T1-E3
N-Channel Tape & Reel (TR) 4.7m Ω @ 24A, 10V ±20V 40nC @ 4.5V 30V PowerPAK® SO-8
SI7382DP-T1-E3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.As shown in the table below, the drain current of this device is 24A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 67 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 50A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
SI7382DP-T1-E3 Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 67 ns
based on its rated peak drain current 50A.
a 30V drain to source voltage (Vdss)
SI7382DP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7382DP-T1-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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