SI7380ADP-T1-E3
- Mfr.Part #
- SI7380ADP-T1-E3
- Manufacturer
- Vishay
- Package / Case
- PowerPAK® SO-8
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 40A PPAK SO-8
- Stock
- 31,144
- In Stock :
- 31,144
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 7785pF @ 15V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Resistance :
- 3mOhm
- Packaging :
- Tape and Reel (TR)
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Continuous Drain Current (ID) :
- 40A
- Series :
- TrenchFET®
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- C BEND
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- PowerPAK® SO-8
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 12V
- Weight :
- 506.605978mg
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 20A, 10V
- Number of Elements :
- 1
- Length :
- 4.9mm
- Vgs(th) (Max) @ Id :
- 1.6V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Nominal Vgs :
- 600 mV
- Fall Time (Typ) :
- 35 ns
- Pin Count :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Case Connection :
- DRAIN
- Published :
- 2015
- Vgs (Max) :
- ±12V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 155 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 70A
- Lead Free :
- Lead Free
- Number of Terminations :
- 8
- Height :
- 1.04mm
- Width :
- 5.89mm
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 5.4W Ta 83W Tc
- FET Type :
- N-Channel
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Turn On Delay Time :
- 17 ns
- Rise Time :
- 13ns
- REACH SVHC :
- Unknown
- Datasheets
- SI7380ADP-T1-E3
N-Channel Tape & Reel (TR) 3m Ω @ 20A, 10V ±12V 7785pF @ 15V 185nC @ 10V PowerPAK® SO-8
SI7380ADP-T1-E3 Overview
A device's maximum input capacitance is 7785pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 40A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 155 ns.Its maximum pulsed drain current is 70A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI7380ADP-T1-E3 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 155 ns
based on its rated peak drain current 70A.
SI7380ADP-T1-E3 Applications
There are a lot of Vishay Siliconix
SI7380ADP-T1-E3 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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