SI7374DP-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2016

Vgs (Max) :

±20V

Input Capacitance :

5.5nF

Drain to Source Resistance :

5.5mOhm

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 15V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

122nC @ 10V

Number of Channels :

1

Radiation Hardening :

No

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Package / Case :

PowerPAK® SO-8

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Factory Lead Time :

14 Weeks

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Supplier Device Package :

PowerPAK® SO-8

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Continuous Drain Current (ID) :

23.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

5.5mOhm @ 23.8A, 10V

Max Operating Temperature :

150°C

Mount :

Surface Mount

Weight :

506.605978mg

Power Dissipation-Max :

5W Ta 56W Tc

Rds On Max :

5.5 mΩ